VS4N55AI Datasheet | Vanguard Semiconductor

Features - N-Channel，10V Logic Level Control - Enhancement mode - Low on-resistance RDS(on) @ VGS=10 V - Fast Switching - Pb-free lead plating; Ro HS pliant 550V/4A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V ID 550 V 2.1 Ω 4A TO-251SL Part ID VS4N55AI Package Type TO-251SL Marking 4N55AI Tape and reel information 75pcs/Tube Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage Gate-Source voltage IS Diode continuous forward current ID Continuous drain current @VGS=10V IDM Pulse drain current tested ① IDSM Continuous drain current @VGS=10V Avalanche energy, single pulsed ② PDSM Maximum power dissipation Maximum power dissipation ③ TSTG , TJ Storage and Junction Temperature Range Thermal Characteristics Symbol Parameter RJC Thermal Resistance, Junction-to-Case RJA Thermal Resistance, Junction-to-Ambient TC =25°C TC =25°C TC =100°C TC...