Datasheet Summary
Features
- N-Channel，5V Logic Level Control
- Enhancement mode
- Very low on-resistance RDS(on) @ VGS=4.5 V
- VitoMOS® Technology
- 100% Avalanche test
- Pb-free lead plating; RoHS pliant
65V/30A N-Channel Advanced Power MOSFET
V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID
65 V 19 mΩ 22 mΩ 30 A
PDFN3333
Part ID VS6412AE
Package Type PDFN3333
Marking 6412AE
Tape and reel information
5000PCS/Reel
Maximum ratings, at TA =25°C, unless otherwise specified
Symbol
Parameter
V(BR)DSS
Drain-Source breakdown voltage Diode continuous forward current
ID Continuous drain current@VGS=10V
IDM EAS
Pulse drain current tested ① Avalanche energy, single pulsed ②
TC...