VS8205AS Datasheet | Vanguard Semiconductor

Features Ron(typ.)=22 mΩ @VGS=4.5V Low On-Resistance 150°C Operating Temperature Fast Switching Lead-Free, RoHS pliant 20V/6A Daul N-Channel Advanced Power MOSFET Description VS8205AS designed by the trench processing techniques to achieve extremely low on-resistance. And fast switching speed and improved transfer effective . These Features bine to make this design an extremely efficient and reliable device for variety of DC-DC...