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VS8205AS - Dual N-Channel Advanced Power MOSFET

General Description

VS8205AS designed by the trench processing techniques to achieve extremely low on-resistance.

And fast switching speed and improved transfer effective .

Key Features

  • Ron(typ. )=22 mΩ @VGS=4.5V Low On-Resistance 150°C Operating Temperature Fast Switching Lead-Free, RoHS Compliant VS8205AS 20V/6A Daul N-Channel Advanced Power MOSFET.

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Datasheet Details

Part number VS8205AS
Manufacturer Vanguard Semiconductor
File Size 153.36 KB
Description Dual N-Channel Advanced Power MOSFET
Datasheet download datasheet VS8205AS Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Features Ron(typ.)=22 mΩ @VGS=4.5V Low On-Resistance 150°C Operating Temperature Fast Switching Lead-Free, RoHS Compliant VS8205AS 20V/6A Daul N-Channel Advanced Power MOSFET Description VS8205AS designed by the trench processing techniques to achieve extremely low on-resistance. And fast switching speed and improved transfer effective . These features combine to make this design an extremely efficient and reliable device for variety of DC-DC applications.