Datasheet Summary
20V/7A mon-Drain Dual N-Channel Advanced Power MOSFET
Features
- Dual N-Channel，2.5V Logic Level Control
- Low on-resistance RDS(on) @ VGS=2.5 V
- Fast Switching
- ESD Protection HBM 2.5KV
- Pb-free lead plating; RoHS pliant
V DS R @DS(on),TYP VGS=4.5 V R @DS(on),TYP VGS=2.5 V ID
20 V 19 mΩ 26 mΩ 7A
TSSOP8
Part ID VS8810DTS
Package Type TSSOP8
Marking 8810D
Tape and reel information
3000PCS/Reel
Maximum ratings, at TA =25°C, unless otherwise specified
Symbol
Parameter
V(BR)DSS
Drain-Source breakdown voltage Diode continuous forward current
ID Continuous drain current @VGS=4.5V
IDM Pulse drain current tested ① PD Maximum power dissipation
VGS Gate-Source...