• Part: VSA007N02KD
  • Description: Dual N-Channel Advanced Power MOSFET
  • Manufacturer: Vanguard Semiconductor
  • Size: 597.93 KB
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Datasheet Summary

20V/13A mon-Drain Dual N-Channel Advanced Power MOSFET Features - Dual N-Channel,2.5V Logic Level Control - Enhancement mode - Low on-resistance RDS(on) @ VGS=2.5V - 100% Avalanche Tested - Pb-free lead plating; RoHS pliant V DS 20 V R @DS(on),TYP VGS=4.5V R @DS(on),TYP VGS=2.5V 7.4 mΩ 9.4 mΩ I D 13 A TDFN2x3-6L Part ID VSA007N02KD Package Type TDFN2x3-6L Marking 7N02 Tape and reel information 3000pcs/Reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current IDM EAS Pulse drain current tested ① Avalanche energy, single pulsed...