VSB012N03MS Datasheet | Vanguard Semiconductor

Features - N-Channel - Enhancement mode - Very low on-resistance RDS(on) @ VGS=4.5 V - Fast Switching - 100% Avalanche Tested - Pb-free lead plating; RoHS pliant 30V/38A N-Channel Advanced Power MOSFET V DS 30 V R @DS(on),TYP VGS=10 V 9 mΩ R @DS(on),TYP VGS=4.5V 12 mΩ I D 38 A TDFN3.3x3.3 Part ID VSB012N03MS Package Type TDFN3.3x3.3 Marking 012N03M Tape and reel information 5000pcs/Reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current@VGS=10V IDM EAS Pulse drain current tested ① Avalanche energy, single pulsed ② IAS Avalanche...