Datasheet4U Logo Datasheet4U.com

VSE003P02KS - P-Channel Advanced Power MOSFET

Features

  • P-Channel,-2.5V Logic Level Control.
  • Low on-resistance RDS(on) @ VGS=-2.5 V.
  • Fast Switching.
  • Enhancement mode.
  • 100% Avalanche Tested.
  • Pb-free lead plating; RoHS compliant VSE003P02KS -20V/-65A P-Channel Advanced Power MOSFET V DS -20 V R @DS(on),TYP VGS=-4.5 V R @DS(on),TYP VGS=-2.5V 5.8 mΩ 8 mΩ I D -65 A PDFN3333 Part ID Package Type VSE003P02KS PDFN3333 Marking Tape and reel information 003P02K 5000pcs/reel Maximum ratings, at TA =25°C, unless otherw.

📥 Download Datasheet

Datasheet Details

Part number VSE003P02KS
Manufacturer Vanguard Semiconductor
File Size 490.03 KB
Description P-Channel Advanced Power MOSFET
Datasheet download datasheet VSE003P02KS Datasheet

Full PDF Text Transcription

Click to expand full text
Features  P-Channel,-2.5V Logic Level Control  Low on-resistance RDS(on) @ VGS=-2.5 V  Fast Switching  Enhancement mode  100% Avalanche Tested  Pb-free lead plating; RoHS compliant VSE003P02KS -20V/-65A P-Channel Advanced Power MOSFET V DS -20 V R @DS(on),TYP VGS=-4.5 V R @DS(on),TYP VGS=-2.5V 5.8 mΩ 8 mΩ I D -65 A PDFN3333 Part ID Package Type VSE003P02KS PDFN3333 Marking Tape and reel information 003P02K 5000pcs/reel Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage VGS Gate-Source voltage IS Diode continuous forward current ID Continuous drain current @VGS=-4.5V IDM Pulse drain current tested ① IDSM Continuous drain current @VGS=-4.
Published: |