Datasheet4U Logo Datasheet4U.com

VSF190N70HS2 - N-Channel Advanced Power MOSFET

Features

  • Enhancement mode.
  • Low on-resistance RDS(on) @ VGS=10V.
  • Super Junction Technology.
  • ESD Protection HBM 8KV.
  • Pb-free lead plating; RoHS compliant; Halogen free V DS R @ DS(on),TYP VGS=10V ID 700 V 150 mΩ 20 A TO-220WF Part ID VSF190N70HS2 Package Type TO-220WF Marking 190N70H Tube Information 50pcs/Tube Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter V(BR)DSS VGS Drain-Source breakdown voltage Gate-Source voltage IS ID IDM EAS Dio.

📥 Download Datasheet

Datasheet preview – VSF190N70HS2

Datasheet Details

Part number VSF190N70HS2
Manufacturer Vanguard Semiconductor
File Size 440.15 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet VSF190N70HS2 Datasheet
Additional preview pages of the VSF190N70HS2 datasheet.

📁 Similar Datasheet

Other Datasheets by Vanguard Semiconductor

Full PDF Text Transcription

Click to expand full text
VSF190N70HS2 700V/20A N-Channel Advanced Power MOSFET Features  Enhancement mode  Low on-resistance RDS(on) @ VGS=10V  Super Junction Technology  ESD Protection HBM 8KV  Pb-free lead plating; RoHS compliant; Halogen free V DS R @ DS(on),TYP VGS=10V ID 700 V 150 mΩ 20 A TO-220WF Part ID VSF190N70HS2 Package Type TO-220WF Marking 190N70H Tube Information 50pcs/Tube Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter V(BR)DSS VGS Drain-Source breakdown voltage Gate-Source voltage IS ID IDM EAS Diode continuous forward current Continuous drain current @VGS=10V Pulse drain current tested ① Avalanche energy, single pulsed ② PD Maximum power dissipation TSTG , TJ Storage and Junction Temperature Range Thermal Characteristics Symbol Parameter Rθ
Published: |