Pb-free lead plating; RoHS compliant; Halogen free
V DS R @ DS(on),TYP VGS=10V ID
700 V
150 mΩ
20
A
TO-220WF
Part ID VSF190N70HS2
Package Type TO-220WF
Marking 190N70H
Tube Information 50pcs/Tube
Maximum ratings, at TA =25°C, unless otherwise specified
Symbol
Parameter
V(BR)DSS
VGS
Drain-Source breakdown voltage Gate-Source voltage
IS ID IDM
EAS
Dio.
Full PDF Text Transcription for VSF190N70HS2 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
VSF190N70HS2. For precise diagrams, and layout, please refer to the original PDF.
VSF190N70HS2 700V/20A N-Channel Advanced Power MOSFET Features Enhancement mode Low on-resistance RDS(on) @ VGS=10V Super Junction Technology ESD Protection HBM 8...
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e RDS(on) @ VGS=10V Super Junction Technology ESD Protection HBM 8KV Pb-free lead plating; RoHS compliant; Halogen free V DS R @ DS(on),TYP VGS=10V ID 700 V 150 mΩ 20 A TO-220WF Part ID VSF190N70HS2 Package Type TO-220WF Marking 190N70H Tube Information 50pcs/Tube Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter V(BR)DSS VGS Drain-Source breakdown voltage Gate-Source voltage IS ID IDM EAS Diode continuous forward current Continuous drain current @VGS=10V Pulse drain current tested ① Avalanche energy, single pulsed ② PD Maximum power dissipation TSTG , TJ Storage and Junction Temperature Range
VSF190N70HS2 Datasheet
