Pb-free lead plating; RoHS compliant; Halogen free
V DS R @ DS(on),TYP VGS=10V ID
700 V
520 mΩ
8
A
TO-220SF
Part ID VSF600N70HS3
Package Type TO-220SF
Marking 600N70H
Tube Information 50pcs/Tube
Maximum ratings, at TA =25°C, unless otherwise specified
Symbol
Parameter
V(BR)DSS
VGS
Drain-Source breakdown voltage Gate-Source voltage
IS ID IDM
EAS
Diode continuous forward current Conti.
Full PDF Text Transcription for VSF600N70HS3 (Reference)
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VSF600N70HS3. For precise diagrams, and layout, please refer to the original PDF.
VSF600N70HS3 700V/8A N-Channel Advanced Power MOSFET Features Extremely low gate charge 100% avalanche tested Super Junction Technology Pb-free lead plating; RoHS...
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lanche tested Super Junction Technology Pb-free lead plating; RoHS compliant; Halogen free V DS R @ DS(on),TYP VGS=10V ID 700 V 520 mΩ 8 A TO-220SF Part ID VSF600N70HS3 Package Type TO-220SF Marking 600N70H Tube Information 50pcs/Tube Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter V(BR)DSS VGS Drain-Source breakdown voltage Gate-Source voltage IS ID IDM EAS Diode continuous forward current Continuous drain current @VGS=10V Pulse drain current tested ① Avalanche energy, single pulsed ② TC =25°C TC =25°C TC =100°C TC =25°C PD Maximum power dissipation TSTG , TJ Storage and Junction Temperature
VSF600N70HS3 Datasheet
