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VSF600N70HS3 - N-Channel Advanced Power MOSFET

Features

  • Extremely low gate charge.
  • 100% avalanche tested.
  • Super Junction Technology.
  • Pb-free lead plating; RoHS compliant; Halogen free V DS R @ DS(on),TYP VGS=10V ID 700 V 520 mΩ 8 A TO-220SF Part ID VSF600N70HS3 Package Type TO-220SF Marking 600N70H Tube Information 50pcs/Tube Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter V(BR)DSS VGS Drain-Source breakdown voltage Gate-Source voltage IS ID IDM EAS Diode continuous forward current Conti.

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Datasheet Details

Part number VSF600N70HS3
Manufacturer Vanguard Semiconductor
File Size 596.82 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet VSF600N70HS3 Datasheet
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VSF600N70HS3 700V/8A N-Channel Advanced Power MOSFET Features  Extremely low gate charge  100% avalanche tested  Super Junction Technology  Pb-free lead plating; RoHS compliant; Halogen free V DS R @ DS(on),TYP VGS=10V ID 700 V 520 mΩ 8 A TO-220SF Part ID VSF600N70HS3 Package Type TO-220SF Marking 600N70H Tube Information 50pcs/Tube Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter V(BR)DSS VGS Drain-Source breakdown voltage Gate-Source voltage IS ID IDM EAS Diode continuous forward current Continuous drain current @VGS=10V Pulse drain current tested ① Avalanche energy, single pulsed ② TC =25°C TC =25°C TC =100°C TC =25°C PD Maximum power dissipation TSTG , TJ Storage and Junction Temperature Range Thermal Characteristics TC =25°C Symbo
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