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VSM012N06HS - N-Channel Advanced Power MOSFET

Key Features

  • N-Channel，Logic Level 10V.
  • Enhancement mode.
  • Very low on-resistance.
  • Fast Switching.
  • 100% Avalanche Tested.
  • Pb-free lead plating; RoHS compliant VSM012N06HS 60V/55A N-Channel Advanced Power MOSFET V DS 60 V R @DS(on),TYP VGS=10 V 8.5 mΩ I D 55 A TO-263 Part ID VST012N06HS Package Type TO-263 Marking 012N06H Tape and reel information 800pcs/Reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakd.

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Datasheet Details

Part number VSM012N06HS
Manufacturer Vanguard Semiconductor
File Size 354.89 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet VSM012N06HS Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Features  N-Channel，Logic Level 10V  Enhancement mode  Very low on-resistance  Fast Switching  100% Avalanche Tested  Pb-free lead plating; RoHS compliant VSM012N06HS 60V/55A N-Channel Advanced Power MOSFET V DS 60 V R @DS(on),TYP VGS=10 V 8.5 mΩ I D 55 A TO-263 Part ID VST012N06HS Package Type TO-263 Marking 012N06H Tape and reel information 800pcs/Reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current@VGS=10V IDM EAS Pulse drain current tested ① Avalanche energy, single pulsed ② TC =25°C TC =25°C TA =100°C TC =25°C L=0.