• Part: VSO008N10MS
  • Manufacturer: Vanguard Semiconductor
  • Size: 1.14 MB
Download VSO008N10MS Datasheet PDF
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VSO008N10MS Description

Features  N-Channel,5V Logic Level Control  Enhancement mode  Low on-resistance RDS(on) @ VGS=4.5 V  VitoMOS® Ⅱ Technology  100% Avalanche test  Pb-free lead plating; Symbol Parameter VSO008N10MS 100V/17A N-Channel Advanced Power MOSFET Condition Min. Forward on voltage Reverse Recovery Time Reverse Recovery Charge ISD=10A,VGS=0V Tj=25℃,Isd=10A, VGS=0V di/dt=100A/μs -- 0.8 1.2 V -- 50 -- ns -- 54 -- nC ①...

VSO008N10MS Key Features

  • N-Channel,5V Logic Level Control
  • Enhancement mode
  • Low on-resistance RDS(on) @ VGS=4.5 V
  • VitoMOS® Ⅱ Technology
  • 100% Avalanche test
  • Pb-free lead plating; RoHS pliant
  • SEP, 2019