VSO100N10MS Datasheet | Vanguard Semiconductor

Features - N-Channel - Enhancement mode - Very low on-resistance @ VGS=4.5 V - Fast Switching - Pb-free lead plating; RoHS pliant 100V/6A N-Channel Advanced Power MOSFET V DS 100 V R DS(on),typ@VGS=10V 78 mΩ R DS(on),typ@VGS=4.5V 85 mΩ ID 6 A SOP8 Part ID Package Type SOP8 Marking 100N10M Tape and reel information 3000pcs/reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage Gate-Source voltage ID Continuous drain current@VGS=10V IDM Pulse drain current tested ① PD Maximum power dissipation IS Diode Continuous Forward Current TJ Maximum Junction Temperature TSTG Storage...