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VSP018N03MD - Dual N-Channel Advanced Power MOSFET

Key Features

  • Dual N-Channel,5V Logic Level Control.
  • Enhancement mode.
  • Low on-resistance RDS(on) @ VGS=4.5 V.
  • Fast Switching.
  • 100% Avalanche Tested.
  • Pb-free lead plating; RoHS compliant VSP018N03MD 30V/30A Dual N-Channel Advanced Power MOSFET V DS R DS(on),Typ @ VGS=10 V R DS(on),Typ @ VGS=4.5 V ID 30 V 17 mΩ 23 mΩ 30 A PDFN5x6 Part ID Package Type VSP018N03MD PDFN5x6 Marking 018N03MD Tape and reel information 3000pcs/reel Maximum ratings, at T j=25 °C, unless otherwi.

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Datasheet Details

Part number VSP018N03MD
Manufacturer Vanguard Semiconductor
File Size 273.50 KB
Description Dual N-Channel Advanced Power MOSFET
Datasheet download datasheet VSP018N03MD Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Features  Dual N-Channel,5V Logic Level Control  Enhancement mode  Low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  100% Avalanche Tested  Pb-free lead plating; RoHS compliant VSP018N03MD 30V/30A Dual N-Channel Advanced Power MOSFET V DS R DS(on),Typ @ VGS=10 V R DS(on),Typ @ VGS=4.5 V ID 30 V 17 mΩ 23 mΩ 30 A PDFN5x6 Part ID Package Type VSP018N03MD PDFN5x6 Marking 018N03MD Tape and reel information 3000pcs/reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage ID Continuous drain current@VGS=10V IDM Pulse drain current tested ① IAS Avalanche current max TC =25°C TC =100°C TC =25°C L=0.