VS1696GKH
Features
- Enhancement mode
- Very low on-resistance
- Vito MOS® Ⅱ Technology
- Fast Switching and High efficiency
- 100% Avalanche Tested,100% Rg Tested
- VS1696GKH
100V/270A N-Channel Advanced Power MOSFET
V DS R @ DS(on),TYP VGS=10 V I D(Silicon Limited) I D(Package Limited)
100 V 1.8 mΩ 368 A 270 A
TOLL
Part ID VS1696GKH
Package Type TOLL
Marking 1696GKH
Packing 2000PCS/Reel
Maximum ratings, at TA =25°C, unless otherwise specified
Symbol
Parameter
Rating
Unit
V(BR)DSS Drain-Source breakdown voltage
VGS IS ID ID ID IDM
Gate-Source voltage
Diode continuous forward current
TC = 25°C
Continuous drain current @VGS=10V (Silicon limited)
TC = 25°C
Continuous drain current @VGS=10V (Silicon limited)
TC = 100°C
Continuous drain current @VGS=10V (Wire bond limited) TC = 25°C
Pulse drain current tested ①
TC =25°C
IDSM
Continuous drain current @VGS=10V
TA=25°C TA=70°C
Avalanche energy, single pulsed ②
PD PDSM
Maximum power dissipation ③ Maximum power...
