VSE003N04MS-G
Features
V DS
- Enhancement mode
- Low RDS(on) to minimize conduction losses
- Vito MOS® Ⅱ Technology
R @ DS(on),TYP VGS=10 V R @ DS(on),TYP VGS=4.5 V I D(Package Limited)
1.6 mΩ
2.8 mΩ
- Optimized Qg, Qgd, and Qgd/Qgs ratio to minimize switching losses
- 100% Avalanche Tested,100% Rg Tested
PDFN3333
Part ID VSE003N04MS-G
Package Type PDFN3333
Marking 003N04M
Packing 5000PCS/Reel
Maximum ratings, at TA =25°C, unless otherwise specified
Symbol
Parameter
V(BR)DSS VGS IS ID ID IDM
Drain-Source breakdown voltage Gate-Source voltage Diode continuous forward current (Package limited) Continuous drain current @VGS=10V (Package limited) Continuous drain current @VGS=10V (Package limited) Pulse drain current tested ①
IDSM
Continuous drain current @VGS=10V
Maximum Avalanche energy, single pulsed ②
Maximum power dissipation ③
PDSM
Maximum power dissipation ④
TSTG,TJ Storage and Junction Temperature Range
Thermal Characteristics
TC = 25°C TC = 25°C...
