VSP012N12MS-G Datasheet | Vergiga

Features - Enhancement mode - Vito MOS® Ⅱ Technology - Fast Switching and High efficiency - 100% Avalanche Tested,100% Rg Tested 120V/42A N-Channel Advanced Power MOSFET V DS R @ DS(on),TYP VGS=10V R @ DS(on),TYP VGS=4.5V I D(Silicon Limited) 120 V 10 mΩ 12.5 mΩ 42 A PDFN5x6 Part ID VSP012N12MS-G Package Type PDFN5x6 Marking 012N12M Packing 3000pcs/Reel Maximum ratings, at T A=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS VGS IS ID ID IDM Drain-Source breakdown voltage Gate-Source voltage Diode continuous forward current Continuous drain current @VGS=10V (Silicon limited) Continuous drain current @VGS=10V (Silicon limited) Pulse drain current tested ① IDSM Continuous drain current @VGS=10V Avalanche energy, single pulsed ② Maximum power dissipation ③ PDSM Maximum power dissipation ④ TSTG,TJ Storage and Junction Temperature Range TC = 25°C TC = 25°C TC = 100°C TC = 25°C TA = 25°C TA = 70°C TC = 25°C TC = 100°C TA = 25°C TA =...