VSU040N65HS3
Features
- Enhancement mode
- Low on-resistance RDS(on) @ VGS=10 V
- Super Junction Technology
- Ultra-fast and robust body diode
- 100% Avalanche test,100% Rg Tested
650V/80A N-Channel Advanced Power MOSFET
V DS R @ DS(on),TYP VGS=10 V I D(Silicon Limited)
650 V
32 mΩ
TO-247
Part ID VSU040N65HS3
Package Type TO-247
Marking 040N65H
Packing 30pcs/Tube
Maximum ratings, at TA =25°C, unless otherwise specified
Symbol
Parameter
Rating
V(BR)DSS Drain-Source breakdown voltage
VGS IS ID ID IDM
Gate-Source voltage
±30
Diode continuous forward current (Silicon limited)
TC = 25°C
Continuous drain current @VGS=10V (Silicon limited)
TC = 25°C
Continuous drain current @VGS=10V (Silicon limited)
TC = 100°C
Pulse drain current tested ①
TC = 25°C
IDSM
Continuous drain current @VGS=10V
TA =...
