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VSU040N65HS3 - 650V/80A N-Channel Advanced Power MOSFET

Features

  • Enhancement mode.
  • Low on-resistance RDS(on) @ VGS=10 V.
  • Super Junction Technology.
  • Ultra-fast and robust body diode.
  • 100% Avalanche test,100% Rg Tested VSU040N65HS3 650V/80A N-Channel Advanced Power MOSFET V DS R @ DS(on),TYP VGS=10 V I D(Silicon Limited) 650 V 32 mΩ 80 A TO-247 Part ID VSU040N65HS3 Package Type TO-247 Marking 040N65H Packing 30pcs/Tube Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter Rating V(BR)DSS Drain-Source.

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Datasheet Details

Part number VSU040N65HS3
Manufacturer Vergiga
File Size 1.09 MB
Description 650V/80A N-Channel Advanced Power MOSFET
Datasheet download datasheet VSU040N65HS3 Datasheet
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    Features  Enhancement mode  Low on-resistance RDS(on) @ VGS=10 V  Super Junction Technology  Ultra-fast and robust body diode  100% Avalanche test,100% Rg Tested VSU040N65HS3 650V/80A N-Channel Advanced Power MOSFET V DS R @ DS(on),TYP VGS=10 V I D(Silicon Limited) 650 V 32 mΩ 80 A TO-247 Part ID VSU040N65HS3 Package Type TO-247 Marking 040N65H Packing 30pcs/Tube Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter Rating V(BR)DSS Drain-Source breakdown voltage 650 VGS IS ID ID IDM Gate-Source voltage ±30 Diode continuous forward current (Silicon limited) TC = 25°C 80 Continuous drain current @VGS=10V (Silicon limited) TC = 25°C 80 Continuous drain current @VGS=10V (Silicon limited) TC = 100°C 51 Pulse drain current tested ① TC = 25°
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