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10-FY064PA075SG-M583F08 - IGBT Module

Features

  • Low inductive 12mm flow1 package.
  • H-Bridge topology.
  • High-speed IGBT + ultrafast FWD.
  • Temperature sensor 650V/75A flowPACK 1 H Target.

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10-FY064PA075SG-M583F08 flowPACK 1 H Features ● Low inductive 12mm flow1 package ● H-Bridge topology ● High-speed IGBT + ultrafast FWD ● Temperature sensor 650V/75A flowPACK 1 H Target Applications ● Solar inverter ● Power Supply ● Inverter based welding Schematic Types ● 10-FY064PA075SG-M583F08 Maximum Ratings Tj=25°C, unless otherwise specified Parameter Symbol Condition Value Unit H-Bridge IGBT Collector-emitter break down voltage DC collector current Pulsed collector current Turn off safe operating area Power dissipation per IGBT Gate-emitter peak voltage Short circuit ratings Maximum Junction Temperature Ptot VGE tSC VCC Tjmax Tj≤150°C VGE=15V VCE IDC ICpulse Tj=Tjmax tp limited by Tjmax VCE ≤ 650V, Tj ≤ Top max Tj=Tjmax Th=80°C Tc=80°C Th=80°C Tc=80°C 650 53 71 225 150 93
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