Overview: TECHNOLOGIES
8mΩ 650V D3GaN™ Power FET
V08TC065S1X11 Descript ion The D3GaN™ (Direct Drive D-Mode) V08TC065S1X11 Power Switch integrates a patented, high-density, lateral GaN power transistor, into a Normally-Off product with extremely low RDS(ON) and except ionally eff icient switching performance. The D3GaN™ technology has been implemented into an Isolated High Power SMD package, an innovat ion by VisIC Technologies, very effect ive in applicat ions requiring High Power and Eff iciency, with Low Volume and Cost. The integrated safety funct ions ensure safe operat ion during system start up and shutdown, while having no impact on the switching performance of the GaN transistor.
