50N02409PU54A
FEATURES
ID (A)d
80 64 r DS(on) (W)
0.006 @ VGS = 10 V 0.0095 @ VGS = 4.5 V
D Trench FETr Power MOSFET D 175_C Junction Temperature D PWM Optimized for High Efficiency
APPLICATIONS
D Synchronous Buck DC/DC Conversion
- Desktop
- Server
TO-252
G Drain Connected to Tab G D S
Top View Order Number: SUD50N024-06P S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Pulse Voltage Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Current Continuous Source Current (Diode Conduction)a Avalanche Current, Single Pulse Avalanche Energy, Single Pulse TA = 25_C Maximum Power Dissipation Operating Junction and Storage Temperature Range TC = 25_C PD TJ, Tstg L = 0.1 m H TC = 25_C TC= 100_C ID IDM IS IAS EAS
Symbol
VDS(pulse) VDS VGS
Limit
24C 22 "20 80d 56d 100 26 45 101 6.8a 65
- 55 to 175
Unit
A m J W _C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction Junction-to-Ambient to Ambienta Maximum...
