GFB50N03 - N-Channel Enhancement-Mode MOSFET

Datasheet Summary

Features

Advanced Trench Process Technology.
High Density Cell Design for Ultra Low On-Resistance.
Specially Designed for Low Voltage DC/DC Converters.
Fast Switching for High Efficiency Maximum Ratings and Thermal Characteristics (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(1) Pulsed Drain Current Maximum Power Dissipation TC = 25°C TC = 100°C Symbol VDS VGS ID IDM PD TJ, Tstg TL RθJC (2) C = 25°C unless otherwise noted) Limit 30.

Vishay Intertechnology

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Datasheet Details

Part number	GFB50N03
Manufacturer	Vishay Intertechnology
File Size	106.28 KB
Description	N-Channel Enhancement-Mode MOSFET
Datasheet	GFB50N03 Datasheet
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GFB50N03 N-Channel Enhancement-Mode MOSFET VDS 30V RDS(ON) 13mΩ ID 50A D TO-263AB 0.380 (9.65) 0.420 (10.67) 0.21 (5.33) Min. D G 0.160 (4.06) 0.190 (4.83) 0.045 (1.14) 0.055 (1.40) S 0.42 (10.66) 0.320 (8.13) 0.360 (9.14) G PIN D S 0.575 (14.60) 0.625 (15.88) 0.055 (1.39) 0.066 (1.68) Dimensions in inches and (millimeters) 0.63 (17.02) 0.33 (8.38) Seating Plate -T0.096 (2.43) 0.102 (2.59) 0.027 (0.686) 0.037 (0.940) 0.120 (3.05) 0.155 (3.94) 0.014 (0.35) 0.020 (0.51) 0.100 (2.54) 0.130 (3.30) 0.08 (2.032) 0.24 (6.096) 0.12 (3.05) Mounting Pad Layout Mechanical Data Case: JEDEC TO-263 molded plastic body Terminals: Leads solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250°C/10 seconds at terminals Mounting Position: Any Weight: 1.

Published: Oct 6, 2005 |