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P-Channel 1.5-V Rated MOSFET
Si8451DB
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.080 at VGS = - 4.5 V
- 20
0.100 at VGS = - 2.5 V
0.126 at VGS = - 1.8 V
0.200 at VGS = - 1.5 V
ID (A)e - 10.8 - 9.7 - 3.0 - 1.2
Qg (Typ.) 7.7 nC
MICRO FOOT
Bump Side View
Backside View
FEATURES • TrenchFET® Power MOSFET
APPLICATIONS • Portable Devices
- Battery Management - Low Threshold Load Switch - Battery Protection
S
G
2
1
S
8451
XXX
S
S
3
6
G
D
D
4
5
Device Marking: 8451
xxx = Date/Lot Traceability Code
D
Ordering Information: Si8451DB-T2-E1 (Lead (Pb)-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
- 20
Gate-Source Voltage
VGS
±8
TC = 25 °C
- 10.
Si8451DB Datasheet
