Datasheet4U Logo Datasheet4U.com

Si8461DB - P-Channel MOSFET

Key Features

  • TrenchFET® power MOSFET.
  • Ultra small 1 mm x 1 mm maximum outline.
  • Ultra-thin 0.548 mm maximum height.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

📥 Download Datasheet

Datasheet Details

Part number Si8461DB
Manufacturer Vishay
File Size 153.04 KB
Description P-Channel MOSFET
Datasheet download datasheet Si8461DB Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.vishay.com Si8461DB Vishay Siliconix P-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) -20 RDS(on) (Ω) 0.100 at VGS = -4.5 V 0.118 at VGS = -2.5 V 0.140 at VGS = -1.8 V 0.205 at VGS = -1.5 V ID (A) a, e -3.7 -3.4 -3.1 -2 Qg (TYP.) 9.5 nC MICRO FOOT® 1 x 1 S S2 xxxxxxx 3 1 1 1 mm 4G D 1 mm Backside View Bump Side View Marking Code: xxxx = 8461 xxx = Date / lot traceability code Ordering Information: Si8461DB-T2-E1 (lead (Pb)-free and halogen-free) FEATURES • TrenchFET® power MOSFET • Ultra small 1 mm x 1 mm maximum outline • Ultra-thin 0.548 mm maximum height • Material categorization: for definitions of compliance please see www.vishay.