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VOM617A - GaAs infrared emitting diode emitter

General Description

The 110 °C rated VOM617A has a GaAs infrared emitting diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a 4 pin 100 mil lead pitch miniflat package.

Key Features

  • a high current transfer ratio, low coupling capacitance, and high isolation voltage. These coupling devices are designed for signal transmission between two electrically separated circuits.

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Datasheet Details

Part number VOM617A
Manufacturer Vishay Semiconductors
File Size 210.82 KB
Description GaAs infrared emitting diode emitter
Datasheet download datasheet VOM617A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.vishay.com VOM617A Vishay Semiconductors Low Input Current, Phototransistor Output, SOP-4, Mini-Flat Package A1 C2 4C 3E i179089 LINKS TO ADDITIONAL RESOURCES 3D 3D 3D Models Design Tools Related Documents DESCRIPTION The 110 °C rated VOM617A has a GaAs infrared emitting diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a 4 pin 100 mil lead pitch miniflat package. It features a high current transfer ratio, low coupling capacitance, and high isolation voltage. These coupling devices are designed for signal transmission between two electrically separated circuits.