VOM617A Description
The 110 °C rated VOM617A has a GaAs infrared emitting diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a 4 pin 100 mil lead pitch miniflat package.
VOM617A Key Features
- Operating temperature from -55 °C to +110 °C
- SOP-4 mini-flat package
- Isolation test voltage, 3750 VRMS
- Low saturation voltage
- Fast switching times
- Low coupling capacitance
- End-stackable, 0.100" (2.54 mm) spacing
- CTR range 50 % to 600 %, IF = 5 mA