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DG612 - High-Speed / Low-Glitch D/CMOS Analog Switches

Description

The DG611, DG612, DG613 feature high-speed lowcapacitance lateral DMOS switches.

Charge injection has been minimized to optimize performance in fast sample-andhold applications.

Each switch conducts equally well in both directions when on and blocks up to 16 Vp-p when off.

Features

  • Fast switching - tON: 12 ns.
  • Low charge injection: ± 2 pC.
  • Wide bandwidth: 500 MHz.
  • 5 V CMOS logic compatible.
  • Low RDS(on): 18 .
  • Low quiescent power : 1.2 nW.
  • Single supply operation.

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Datasheet preview – DG612

Datasheet Details

Part number DG612
Manufacturer Vishay Siliconix
File Size 179.62 KB
Description High-Speed / Low-Glitch D/CMOS Analog Switches
Datasheet download datasheet DG612 Datasheet
Additional preview pages of the DG612 datasheet.

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Full PDF Text Transcription

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DG611, DG612, DG613 Vishay Siliconix High-Speed, Low-Glitch D/CMOS Analog Switches DESCRIPTION The DG611, DG612, DG613 feature high-speed lowcapacitance lateral DMOS switches. Charge injection has been minimized to optimize performance in fast sample-andhold applications. Each switch conducts equally well in both directions when on and blocks up to 16 Vp-p when off. Capacitances have been minimized to ensure fast switching and low-glitch energy. To achieve such fast and clean switching performance, the DG611, DG612, DG613 are built on the Vishay Siliconix proprietary D/CMOS process. This process combines n-channel DMOS switching FETs with low-power CMOS control logic and drivers. An epitaxial layer prevents latchup.
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