EGF1T Datasheet | Vishay

.Data Sheet.co.kr New Product Vishay General Semiconductor Surface Mount Glass Passivated Ultrafast Rectifier Features - Superectifier structure for high reliability condition - Cavity-free glass-passivated junction SUPERECTIFIER® - Ideal for automated placement - Ultrafast reverse recovery time - Low switching losses, high efficiency - Avalanche surge energy capability - Meets environmental standard MIL-S-19500 DO-214BA (GF1) - Meets MSL level 1, per J-STD-020, LF maximum peak of 250 °C - AEC-Q101 qualified - pliant to Ro HS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM trr EAS TJ max. 1.0 A 1300 V 20 A 75 ns 15 m J 150 °C TYPICAL APPLICATIONS For use in high voltage rectification of photoflash application. MECHANICAL DATA Case: DO-214BA, molded plastic over glass body Molding pound meets UL 94 V-0 flammability rating Base P/N-E3 - Ro HS pliant, mercial grade Base P/NHE3 - Ro HS pliant, AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Device marking code Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking Maximum average forward rectified current Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Non-repetitive avalanche energy at TA = 25 °C, IAS = 1 A, L = 30 m H Operating junction and storage temperature range VRRM VRMS VDC IF(AV) IFSM EAS TJ, TSTG SYMBOL EGF1T ET 1300 910 1300 1.0 20 15 - 55 to + 150 V V V A A m J °C UNIT Document Number: 88904 Revision: 15-Mar-11 For technical questions within your region, please contact one of the following: .vishay. Diodes Americas@vishay., Diodes Asia@vishay., Diodes Europe@vishay. 1 This datasheet is subject to change without...