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GA300TD60S
Vishay Semiconductors
Dual INT-A-PAK Low Profile "Half-Bridge" (Standard Speed IGBT), 300 A
FEATURES
• Generation 4 IGBT technology • Standard: Optimized for hard switching speed DC to 1 kHz • Low VCE(on) • Square RBSOA • HEXFRED® antiparallel diode with ultrasoft reverse recovery characteristics • Industry standard package • Al2O3 DBC Dual INT-A-PAK Low Profile • UL approved file E78996 • Compliant to RoHS Directive 2002/95/EC • Designed for industrial level
PRODUCT SUMMARY
VCES IC DC at TC = 25 °C VCE(on) (typical) at 300 A, 25 °C 600 V 530 A 1.