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GB75DA120UP - Insulated Gate Bipolar Transistor

Features

  • NPT Generation V IGBT technology.
  • Square RBSOA.

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Datasheet preview – GB75DA120UP

Datasheet Details

Part number GB75DA120UP
Manufacturer Vishay
File Size 244.40 KB
Description Insulated Gate Bipolar Transistor
Datasheet download datasheet GB75DA120UP Datasheet
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Full PDF Text Transcription

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www.DataSheet.co.kr GB75DA120UP Vishay Semiconductors Insulated Gate Bipolar Transistor (Ultrafast IGBT), 75 A FEATURES • NPT Generation V IGBT technology • Square RBSOA • HEXFRED® low Qrr, low switching energy • Positive VCE(on) temperature coefficient • Fully isolated package SOT-227 • Speed 8 kHz to 60 kHz • Very low internal inductance ( 5 nH typical) • Industry standard outline • UL approved file E78996 • Compliant to RoHS directive 2002/95/EC PRODUCT SUMMARY VCES IC DC VCE(on) typical at 75 A, 25 °C 1200 V 75 A at 95 °C 3.
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