GB75DA120UP Description
.DataSheet.co.kr GB75DA120UP Vishay Semiconductors Insulated Gate Bipolar Transistor (Ultrafast IGBT), 75.
GB75DA120UP Key Features
- NPT Generation V IGBT technology
- Square RBSOA
- HEXFRED® low Qrr, low switching energy
- Positive VCE(on) temperature coefficient
- Fully isolated package
- Speed 8 kHz to 60 kHz
- Very low internal inductance ( 5 nH typical)
- Industry standard outline
- UL approved file E78996
- pliant to RoHS directive 2002/95/EC