Datasheet4U Logo Datasheet4U.com

IL207AT - Optocoupler / Phototransistor

Download the IL207AT datasheet PDF. This datasheet also covers the IL205AT variant, as both devices belong to the same optocoupler / phototransistor family and are provided as variant models within a single manufacturer datasheet.

General Description

The IL205AT/IL206AT/IL207AT/IL208AT are optically coupled pairs with a gallium arsenide infrared LED and a silicon NPN phototransistor.

Signal information, including a DC level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output.

Key Features

  • A1 K2 NC 3 NC 4 8 NC 7B 6C 5E.
  • High BVCEO, 70 V.
  • Isolation test voltage, 4000 VRMS.
  • Industry standard SOIC-8A mountable package surface.
  • Compatible with dual wave, vapor phase and IR reflow soldering.
  • Lead (Pb)-free component i179002.
  • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IL205AT_VishaySiliconix.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number IL207AT
Manufacturer Vishay
File Size 102.69 KB
Description Optocoupler / Phototransistor
Datasheet download datasheet IL207AT Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IL205AT/206AT/207AT/208AT Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection in SOIC-8 Package FEATURES A1 K2 NC 3 NC 4 8 NC 7B 6C 5E • High BVCEO, 70 V • Isolation test voltage, 4000 VRMS • Industry standard SOIC-8A mountable package surface • Compatible with dual wave, vapor phase and IR reflow soldering • Lead (Pb)-free component i179002 • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC DESCRIPTION The IL205AT/IL206AT/IL207AT/IL208AT are optically coupled pairs with a gallium arsenide infrared LED and a silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output.