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IRFIZ14G - Power MOSFET

General Description

Third generation Power MOSFETs from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.

Key Features

  • 60 0.20.
  • Isolated Package.
  • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz).
  • Sink to Lead Creepage Distance = 4.8 mm.
  • 175 °C Operating Temperature.
  • Dynamic dv/dt Rating.
  • Low Thermal Resistance.
  • Compliant to RoHS Directive 2002/95/EC Available RoHS.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet.co.kr IRFIZ14G, SiHFIZ14G Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 11 3.1 5.8 Single D FEATURES 60 0.20 • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • 175 °C Operating Temperature • Dynamic dv/dt Rating • Low Thermal Resistance • Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT TO-220 FULLPAK DESCRIPTION G S G D S N-Channel MOSFET Third generation Power MOSFETs from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.