IRFIZ14G Datasheet | Vishay

.Data Sheet.co.kr IRFIZ14G, Si HFIZ14G Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (n C) Qgs (n C) Qgd (n C) Configuration VGS = 10 V 11 3.1 5.8 Single Features 60 0.20 - Isolated Package - High Voltage Isolation = 2.5 k VRMS (t = 60 s; f = 60 Hz) - Sink to Lead Creepage Distance = 4.8 mm - 175 °C Operating Temperature - Dynamic dv/dt Rating - Low Thermal Resistance - pliant to Ro HS Directive 2002/95/EC Available Ro HS- PLIANT TO-220 FULLPAK DESCRIPTION N-Channel MOSFET Third generation Power MOSFETs from Vishay provides the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in mercial-industrial applications. The molding pound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing. ORDERING INFORMATION Package Lead (Pb)-free Sn Pb TO-220 FULLPAK IRFIZ14GPb F Si HFIZ14G-E3 IRFIZ14G Si...