Datasheet Summary
.vishay.
IRFP048R, SiHFP048R
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
60 VGS = 10 V
110 29 38 Single
TO-247AC
S N-Channel MOSFET
Features
- Dynamic dV/dt rating
- Isolated central mounting hole
- 175 °C operating temperature
- Ease of paralleling
- Simple drive requirements
- Material categorization: for definitions of pliance please see .vishay./doc?99912
DESCRIPTION
Third generation power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred...
