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IRFP450N - Power MOSFET

Key Features

  • 500 0.37.
  • Low Gate Charge Qg Results in Simple Drive Requirement.
  • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness.
  • Fully Characterized Capacitance and Avalanche Voltage and Current.
  • Effective Coss Specified.
  • Lead (Pb)-free RoHS.

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IRFP450N, SiHFP450N Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Max.) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 77 26 34 Single D FEATURES 500 0.