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IRFR1N60A - Power MOSFET

Key Features

  • Low gate charge Qg results in simple drive requirement.
  • Improved gate, avalanche and dynamic dV/dt ruggedness.
  • Fully characterized capacitance and avalanche voltage and current Available.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A www.vishay.com Vishay Siliconix Power MOSFET DPAK (TO-252) D IPAK (TO-251) D D G GS GD S S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) max. (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 600 VGS = 10 V 7.0 14 2.7 8.1 Single FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current Available • Material categorization: for definitions of compliance please see www.vishay.