IRFR1N60A
IRFR1N60A is Power MOSFET manufactured by Vishay.
FEATURES
- Low gate charge Qg results in simple drive requirement
- Improved gate, avalanche and dynamic d V/dt ruggedness
- Fully characterized capacitance and avalanche voltage and current
Available
- Material categorization: for definitions of pliance please see .vishay./doc?99912
APPLICATIONS
- Switch mode power supply (SMPS)
- Uninterruptible power supply
- Power factor correction
TYPICAL SMPS TOPOLOGIES
- Low power single transistor flyback
ORDERING INFORMATION
Package
DPAK (TO-252)
Si HFR1N60A-GE3 Lead (Pb)-free and halogen-free
IRFR1N60APb F-BE3 ab
Lead (Pb)-free
IRFR1N60APb F
Notes a. See device orientation b. “-BE3” denotes alternate manufacturing location
DPAK (TO-252) Si HFR1N60ATRL-GE3 a IRFR1N60ATRPb F-BE3 ab IRFR1N60ATRLPb F a
DPAK (TO-252) Si HFR1N60ATR-GE3 a Si HFR1N60ATRR-GE3 a IRFR1N60ATRPb F a
IPAK (TO-251) Si HFU1N60A-GE3 IRFU1N60APb F
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage Gate-source voltage
Continuous drain current
Pulsed drain current a Linear derating factor Single pulse avalanche energy b Repetitive avalanche current a Repetitive avalanche energy a Maximum power dissipation Peak diode recovery d V/dt c Operating junction and storage temperature range Soldering remendations (peak temperature) d
VGS at 10 V
TC = 25 °C TC = 100 °C
TA = 25 °C for 10 s
VDS VGS
EAS IAR EAR PD d V/dt TJ, Tstg
Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. Starting TJ = 25 °C, L = 95 m H, Rg = 25 Ω, IAS = 1.4 A (see fig. 12) c. ISD ≤ 1.4 A, d I/dt ≤ 180 A/μs, VDD ≤ VDS, TJ ≤ 150 °C d. 1.6 mm from case
LIMIT 600 ± 30 1.4 0.89 5.6 0.28 93 1.4 3.6 36 3.8
-55 to +150 300
UNIT...
