IRFR9014 Datasheet | Vishay

FEATURES - Dynamic d V/dt Rating - Repetitive Avalanche Rated - Surface Mount (IRFR9014, Si HFR9014) - Straight Lead (IRFU9014, Si HFU9014) - Available in Tape and Reel - P-Channel - Fast Switching - Material categorization: For definitions of pliance please see .vishay./doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU, Si HFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications. ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free DPAK (TO-252) Si HFR9014-GE3 IRFR9014Pb F Si HFR9014-E3 Note a. See device orientation. DPAK (TO-252) Si HFR9014TRL-GE3a IRFR9014TRLPb Fa Si HFR9014TL-E3a DPAK (TO-252) Si HFR9014TR-GE3a IRFR9014TRPb Fa Si HFR9014T-E3a IPAK (TO-251) Si HFU9014-GE3 IRFU9014Pb F Si HFU9014-E3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta VGS at 5.0 V TC = 25 °C TC = 100 °C Linear Derating Factor Linear Derating Factor (PCB Mount)e Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Maximum Power Dissipation (PCB Mount)e Peak Diode Recovery d V/dtc TC = 25 °C TA = 25 °C Operating Junction and Storage Temperature Range Soldering Remendations (Peak Temperature)d for 10 s VDS VGS ID IDM EAS IAR EAR PD d V/dt TJ, Tstg Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = - 25 V, starting TJ = 25 °C, L = 6.3 m H, Rg = 25 , IAS = - 5.1 A (see fig. 12). c. ISD  - 6.7 A, d I/dt  90 A/μs, VDD  VDS, TJ  150 °C. d. 1.6 mm from case. e. When mounted...