IRFU020 Datasheet | Vishay

FEATURES - Dynamic d V/dt Rating - Surface Mount (IRFR020, Si HFR020) - Available in Tape and Reel - Fast Switching - Ease of Paralleling - Simple Drive Requirements - Material categorization: For definitions of pliance please see .vishay./doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. DPAK (TO-252) Si HFR020TR-GE3 IRFR020TRPb Fa Si HFR020T-E3a IPAK (TO-251) Si HFU020-GE3 IRFU020Pb F Si HFU020-E3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Linear Derating Factor (PCB Mount)e Single Pulse Avalanche Energyb Maximum Power Dissipation Maximum Power Dissipation (PCB Mount)e Peak Diode Recovery d V/dtc VGS at 10 V TC = 25 °C TC = 100 °C VDS VGS TC = 25 °C TA = 25 °C EAS PD d V/dt Operating Junction and Storage Temperature Range Soldering Remendations (Peak Temperature)d for 10 s TJ, Tstg Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 12). b. VDD = 25 V, starting TJ = 25 °C, L = 541 μH, Rg = 25 , IAS = 14 A (see fig. 13). c. ISD  17 A, d I/dt  110 A/μs, VDD  VDS, TJ  150 °C. d. 1.6 mm from case. e. When mounted on 1" square PCB (FR-4 or G-10 material). LIMIT 60 ± 20 14 9.0 56 0.33 0.020 91 42 2.5 5.5 - 55 to + 150 260 UNIT V W/°C m J W V/ns °C S13-0169-Rev. C, 04-Feb-13 Document Number: 90335 For technical questions, contact: hvm@vishay. THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT .vishay./doc?91000 .vishay....