Datasheet Details
| Part number | IRFU020 |
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| Manufacturer | Vishay |
| File Size | 1.02 MB |
| Description | (IRFR020 / IRFU020) Power MOSFET |
| Datasheet | IRFU020 IRFR020 Datasheet (PDF) |
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Overview: www.vishay.com IRFR020, IRFU020, SiHFR020, SiHFU020 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 60 VGS = 10 V 25 5.8 11 Single 0.10 DPAK (TO-252) D IPAK (TO-251) D D G GS GD S S N-Channel MOSFET ORDERING INFORMATION Package DPAK (TO-252) Lead (Pb)-free and Halogen-free SiHFR020-GE3 Lead (Pb)-free IRFR020PbF SiHFR020-E3 Note a. See device orientation.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | IRFU020 |
|---|---|
| Manufacturer | Vishay |
| File Size | 1.02 MB |
| Description | (IRFR020 / IRFU020) Power MOSFET |
| Datasheet | IRFU020 IRFR020 Datasheet (PDF) |
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Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.
DPAK (TO-252) SiHFR020TR-GE3 IRFR020TRPbFa SiHFR020T-E3a IPAK (TO-251) SiHFU020-GE3 IRFU020PbF SiHFU020-E3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Linear Derating Factor (PCB Mount)e Single Pulse Avalanche Energyb Maximum Power Dissipation Maximum Power Dissipation (PCB Mount)e Peak Diode Recovery dV/dtc VGS at 10 V TC = 25 °C TC = 100 °C VDS VGS ID IDM TC = 25 °C TA = 25 °C EAS PD dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d for 10 s TJ, Tstg Notes a.
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