IRFU9022 Datasheet | Vishay

FEATURES - 50 0.33 .. - - - - - - - Surface Mountable (Order as IRFR9022/Si HFR9022) Available Straight Lead Option (Order as IRFU9022/Si HFU9022) Ro HS- Repetitive Avalanche Ratings PLIANT Dynamic d V/dt Rating Simple Drive Requirements Ease of Paralleling Lead (Pb)-free Available DESCRIPTION DPAK (TO-252) IPAK (TO-251) D P-Channel MOSFET The Power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance bined with high transconductance; superior reverse energy and diode recovery d V/dt. The Power MOSFET transistors also feature all of the well established advantages of MOSFET’S such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. Surface mount packages enhance circuit performance by reducing stray inductances and capacitance. The TO-252 surface mount package brings the advantages of Power MOSFET’s to high volume applications where PC Board surface mounting is desirable. The surface mount option IRFR9022/Si HFR9022 is provided on 16mm tape. The straight lead option IRFR9022/Si HFR9022 of the device is called the IPAK (TO-251). They are well suited for applications where limited heat dissipation is required such as, puters and peripherals, telemunication equipment, DC/DC converters, and a wide range of consumer products. ORDERING INFORMATION Package Lead (Pb)-free Sn Pb Note a. See device orientation. DPAK (TO-252) IRFR9022Pb F Si HFR9022-E3 IRFR9022 Si HFR9022 DPAK (TO-252) IRFR9022TRPb Fa Si HFR9022T-E3a IRFR9022TRa Si HFR9022Ta DPAK (TO-252) IRFR9022TRLPb Fa Si HFR9022TL-E3a IRFR9022TRLa Si HFR9022TLa IPAK (TO-251) IRFU9022Pb F Si HFU9022-E3 IRFU9022 Si HFU9022 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse...