IRFU9310 Datasheet | Vishay

FEATURES - Advanced process technology - Fully avalanche rated - Surface-mount (IRFR9310, Si HFR9310) - Straight lead (IRFU9310, Si HFU9310) - P-channel - Fast switching Available - Material categorization: for definitions of pliance please see .vishay./doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU/Si HFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface-mount applications. ORDERING INFORMATION Package DPAK (TO-252) Lead (Pb)-free and halogen-free Si HFR9310-GE3 - Lead (Pb)-free IRFR9310Pb F Note a. See device orientation DPAK (TO-252) Si HFR9310TRL-GE3 IRFR9310TRLPb F-BE3 IRFR9310TRLPb Fa DPAK (TO-252) Si HFR9310TR-GE3 IRFR9310TRPb Fa DPAK (TO-252) Si HFR9310TRR-GE3 IRFR9310TRRPb Fa IPAK (TO-251) Si HFU9310-GE3 IRFU9310Pb F ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current Pulsed drain current a Linear derating factor VGS at -10 V TC = 25 °C TC = 100 °C Single pulse avalanche energy b Repetitive avalanche current a Repetitive avalanche energy a Maximum power dissipation Peak diode recovery d V/dt c TC = 25 °C EAS IAR EAR PD d V/dt Operating junction and storage temperature range Soldering remendations (peak temperature)...