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IRLZ14L Datasheet Power MOSFET

Manufacturer: Vishay

Overview: www.DataSheet.co.kr IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 5 V 8.4 3.5 6.

General Description

I2PAK (TO-262) D2PAK (TO-263) G G D S G D S S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free Note a.

See device orientation.

D2PAK (TO-263) SiHLZ14S-GE3 IRLZ14SPbF SiHLZ14S-E3 D2PAK (TO-263) SiHLZ14STRL-GE3a D2PAK (TO-263) SiHLZ14STRR-GE3a IRLZ14STRRPbFa SiHLZ14STR-E3 I2PAK (TO-262) IRLZ14LPbF SiHLZ14L-E3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER Drain-Source Voltagee Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta, e Linear Derating Factor Single Pulse Avalanche Energyb, e Maximum Power Dissipation Peak Diode Recovery dV/dtc, e Operating Junction and Storage Temper

Key Features

  • 60 0.20.
  • Halogen-free According to IEC 61249-2-21 Definition.
  • Advanced Process Technology.
  • Surface Mount (IRLZ14S, SiHLZ14S).
  • Low-Profile Through-Hole (IRLZ14L, SiHLZ14L).
  • 175 °C Operating Temperature.
  • Fast Switching.
  • Compliant to RoHS Directive 2002/95/EC Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extermely low on-resistance per silicon area. This benefit, combined with the fast swi.

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