Datasheet Summary
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IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 5 V 8.4 3.5 6.0 Single
Features
60 0.20
- Halogen-free According to IEC 61249-2-21 Definition
- Advanced Process Technology
- Surface Mount (IRLZ14S, SiHLZ14S)
- Low-Profile Through-Hole (IRLZ14L, SiHLZ14L)
- 175 °C Operating Temperature
- Fast Switching
- pliant to RoHS Directive 2002/95/EC Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extermely low on-resistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design...
