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IRLZ14L - Power MOSFET

General Description

Package Lead (Pb)-free and Halogen-free Lead (Pb)-free Note a.

See device orientation.

Key Features

  • 60 0.20.
  • Halogen-free According to IEC 61249-2-21 Definition.
  • Advanced Process Technology.
  • Surface Mount (IRLZ14S, SiHLZ14S).
  • Low-Profile Through-Hole (IRLZ14L, SiHLZ14L).
  • 175 °C Operating Temperature.
  • Fast Switching.
  • Compliant to RoHS Directive 2002/95/EC Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extermely low on-resistance per silicon area. This benefit, combined with the fast swi.

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Datasheet Details

Part number IRLZ14L
Manufacturer Vishay
File Size 380.73 KB
Description Power MOSFET
Datasheet download datasheet IRLZ14L Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet.co.kr IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 5 V 8.4 3.5 6.0 Single D FEATURES 60 0.20 • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRLZ14S, SiHLZ14S) • Low-Profile Through-Hole (IRLZ14L, SiHLZ14L) • 175 °C Operating Temperature • Fast Switching • Compliant to RoHS Directive 2002/95/EC Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extermely low on-resistance per silicon area.