MBR1530CT Datasheet | Vishay

Features D Schottky barrier chip D Guard ring die constuction for transient protection D Low power loss, high efficiency D High current capability and low forward voltage drop D High surge capability D For use in low voltage, high frequency inverters, free wheeling, and polarity protection application D Plastic material - UL Recognition flammability classification 94V- 0 95 9630 Absolute Maximum Ratings Tj = 25_ C .. Parameter Repetitive peak reverse voltage g =Working peak reverse voltage DC Bl ki voltage lt =DC Blocking Test Conditions Type MBR1530CT MBR1535CT MBR1540CT MBR1545CT MBR1550CT MBR1560CT Symbol VRRM =VRWM VR =V Value 30 35 40 45 50 60 150 15 - 65...+150 Unit V V V V V V A A °C Peak forward surge current Average forward current Junction and storage temperature range TC=125° C IFSM IFAV Tj=Tstg Rev. A2, 24-Jun-98 1 (5) MBR1530CT- MBR1560CT Vishay Lite- On Power Semiconductor Electrical Characteristics Tj = 25_ C Parameter Forward voltage g Test Conditions IF=7.5A, TC=125° C IF=15A, TC=25° C IF=15A, TC=125° C IF=7.5A, TC=125° C IF=15A, TC=25° C IF=15A, TC=125° C TC=25° C TC=125° C TC=25° C TC=125° C VR=4V, f=1MHz TL=const. Type Symbol Min Typ MBR1530CT VF - MBR1545CT VF VF MBR1550CT VF - MBR1560CT VF VF MBR1530CT IR - MBR1545CT IR MBR1550CT IR - MBR1560CT IR CD 300 Rth JC 1.7 MBR1530CT - MBR1540CT MBR1545CT - MBR1560CT d V/dt d V/dt Max 0.57 0.84 0.72 0.65 0.90 0.80 0.1 15 1.0 50 Unit V V V V V V m A m A m A m A p F K/W K/W Reverse current Diode capacitance Thermal resistance junction to case Voltage rate of change ( Rated VR ) 10000 K/W Characteristics (Tj = 25_ C unless otherwise specified) IFAV - Average Forward Current ( A ) 20 16 12 IF - Forward Current ( A ) 50 T = 25°C j IF Pulse Width = 300 µs 2% Duty Cycle MBR1530 -...