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MBR40H100WT-F - High Performance Schottky Generation

Key Features

  • Base 4 common cathode.
  • 175 °C high performance Schottky diode Very low forward voltage drop Extremely low reverse leakage Optimized VF vs. IR trade off for high efficiency Increased ruggedness for reverse avalanche capability RBSOA available Negligible switching losses Submicron trench technology Fully lead (Pb)-free and RoHS compliant devices Designed and qualified for industrial level Anode T.

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Datasheet Details

Part number MBR40H100WT-F
Manufacturer Vishay
File Size 202.08 KB
Description High Performance Schottky Generation
Datasheet download datasheet MBR40H100WT-F Datasheet

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Full PDF Text Transcription (Reference)

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www.DataSheet.co.kr MBR40H100WT-F Vishay High Power Products High Performance Schottky Generation 5.0, 2 x 20 A FEATURES Base 4 common cathode • • • • • • • • • • 175 °C high performance Schottky diode Very low forward voltage drop Extremely low reverse leakage Optimized VF vs. IR trade off for high efficiency Increased ruggedness for reverse avalanche capability RBSOA available Negligible switching losses Submicron trench technology Fully lead (Pb)-free and RoHS compliant devices Designed and qualified for industrial level Anode TO-247AC Anode 2 1 Common 3 cathode APPLICATIONS PRODUCT SUMMARY IF(AV) VR Maximum VF at 20 A at 125 °C 2 x 20 A 100 V 0.