SI1025X Datasheet | Vishay

FEATURES D D D D D D D High-Side Switching Low On-Resistance: 4 Ω Low Threshold: - 2 V (typ) Fast Switching Speed: 20 ns (typ) Low Input Capacitance: 23 p F (typ) Miniature Package Gate-Source ESD Protection BENEFITS D D D D D D Ease in Driving Switches Low Offset Voltage Low-Voltage Operation High-Speed Circuits Easily Driven Without Buffer Small Board Area APPLICATIONS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems D Power Supply Converter Circuits D Solid-State Relays SC-89 S1 1 6 D1 G1 G2 Marking Code: D D2 S2 Top View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Currentb Continuous Source Current (diode conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range Gate-Source ESD Rating (HBM, Method 3015) Notes a. Surface Mounted on FR4 Board. b. Pulse width limited by maximum junction temperature. Document Number: 71433 S-03518- Rev. A, 23-Apr-01 .vishay. TA = 25_C TA = 85_C PD TJ, Tstg ESD TA = 25_C TA = 85_C ID IDM IS - 450 280 145 - 55 to 150 2000 Symbol VDS VGS 5 secs - 60 "20 - 200 - 145 - 650 Steady State Unit - 190 - 135 m A - 380 250 130 m W _C V Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE...