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P-Channel 12 V (D-S) MOSFET
Si1065X
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) - 12
RDS(on) () 0.156 at VGS = - 4.5 V 0.190 at VGS = - 2.5V 0.245 at VGS = - 1.8V
ID (A) 1.18 1.07 0.49
Qg (Typ.) 6.7 nC
FEATURES • TrenchFET® Power MOSFET • 100 % Rg Tested • Material categorization:
For definitions of compliance please see www.vishay.