The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
P-Channel 1.8 V (G-S) MOSFET
Si1305DL
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
0.280 at VGS = - 4.5 V
- 8 0.380 at VGS = - 2.5 V
0.530 at VGS = - 1.8 V
ID (A) - 0.92 - 0.79 - 0.67
FEATURES • TrenchFET® Power MOSFET: 1.8 V
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
SOT-323 SC-70 (3-LEADS)
G1 S2
3D
Top View
Marking Code
YY
LB X
Lot Traceability and Date Code
Part # Code
Ordering Information: Si1305DL-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
5s
Steady State
Drain-Source Voltage
VDS - 8
Gate-Source Voltage
VGS
±8
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C TA = 70 °C
ID
- 0.92 - 0.74
- 0.86 - 0.
SI1305DL Datasheet
