SI1499DH Datasheet | Vishay

FEATURES - Trench FET® Power MOSFET - Ultra-Low On-Resistance - Ro HS pliant Ro HS PLIANT APPLICATIONS - Load Switch for Portable Devices - Guaranteed Operation at VGS = 1.2 V Critical for Optimized Design and Longer Battery Life SOT-363 SC-70 (6-LEADS) D 1 6 D Marking Code BI D 2 5 D Part # Code XX YY Lot Traceability and Date Code 3 Top View D P-Channel MOSFET Ordering Information: Si1499DH-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C)a, b TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current (10 µs Pulse Width) Continuous Source-Drain Diode Currenta, b TC = 25 °C TA = 25 °C TC = 25 °C Maximum Power Dissipationa, b TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Remendations (Peak Temperature)c, d TJ, Tstg PD IDM IS ID Symbol VDS VGS Limit -8 ±5 -1.6c - 1.6c - 1.6a, b, c - 1.6a, b, c - 6.5c - 1.6c - 1.3a, b 2.78 1.78 2.5a, b 1a, b - 55 to 150 260 °C W A Unit V THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient a, d Symbol t ≤ 5 sec Steady State Rth JA Rth JF Typical 60 34 Maximum 80 45 Unit °C/W Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 board. b. t = 5 sec. c. Package limited. d. Maximum under Steady State conditions is 125 °C/W. Document Number: 73338 S-61963-Rev. C, 09-Oct-06 .vishay. 1 Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS IDSS ID(on) VGS = 0 V, ID = - 250 µA ID = - 250 µA VDS = VGS, ID...