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Si3442BDV
Vishay Siliconix
N-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V)
20
rDS(on) (W)
0.057 @ VGS = 4.5 V 0.090 @ VGS = 2.5 V
ID (A)
4.2 3.4
TSOP-6 Top View
1 3 mm 6 5 (3) G 4
(1, 2, 5, 6) D
2
3
2.85 mm
(4) S N-Channel MOSFET
Ordering Information: Si3442BDV-T1—E3 Marking Code: 2Bxxx
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
5 secs
20 "12 4.2 3.4 20 1.4 1.67 1.07
Steady State
Unit
V
3.0 2.4 A
0.72 0.86 0.
SI3442BDV Datasheet
