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SI3495DV - P-Channel 20-V (D-S) MOSFET

General Description

The attached spice model describes the typical electrical characteristics of the p-channel vertical DMOS.

55 to 125°C temperature ranges under the pulsed 0-V to 5-V gate drive.

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Datasheet Details

Part number SI3495DV
Manufacturer Vishay
File Size 296.25 KB
Description P-Channel 20-V (D-S) MOSFET
Datasheet download datasheet SI3495DV Datasheet

Full PDF Text Transcription for SI3495DV (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for SI3495DV. For precise diagrams, and layout, please refer to the original PDF.

www.DataSheet4U.com SPICE Device Model Si3495DV Vishay Siliconix P-Channel 20-V (D-S) MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • ...

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ERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range • Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics DESCRIPTION The attached spice model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the −55 to 125°C temperature ranges under the pulsed 0-V to 5-V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage.

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