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SI3588DV - N- and P-Channel 20-V (D-S) MOSFET

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Part number SI3588DV
Manufacturer Vishay Siliconix
File Size 59.85 KB
Description N- and P-Channel 20-V (D-S) MOSFET
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Si3588DV New Product Vishay Siliconix N- and P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel 20 rDS(on) (W) 0.080 @ VGS = 4.5 V 0.100 @ VGS = 2.5 V 0.128 @ VGS = 1.8 V 0.145 @ VGS = –4.5 V ID (A) 3.0 2.6 2.3 –2.2 –1.8 –1.5 P-Channel –20 0.200 @ VGS = –2.5 V 0.300 @ VGS = –1.8 V D1 S2 TSOP-6 Top View G1 1 6 D1 G2 3 mm S2 2 5 S1 G1 G2 3 4 D2 2.85 mm S1 N-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) N-Channel Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C TA = 70_C ID IDM IS 1.05 1.15 0.73 0.75 0.83 0.
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