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SI3590DV - N- and P-Channel 30-V (D-S) MOSFET

Features

  • Halogen-free According to IEC 61249-2-21 Definition.
  • TrenchFET® Power MOSFET.
  • Ultra Low RDS(on) N- and P-Channel for High Efficiency.
  • Optimized for High-Side/Low-Side.
  • Minimized Conduction Losses.
  • Compliant to RoHS Directive 2002/95/EC.

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Datasheet Details

Part number SI3590DV
Manufacturer Vishay Siliconix
File Size 229.14 KB
Description N- and P-Channel 30-V (D-S) MOSFET
Datasheet download datasheet SI3590DV Datasheet
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Full PDF Text Transcription

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Si3590DV Vishay Siliconix N- and P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) N-Channel 30 0.077 at VGS = 4.5 V 0.120 at VGS = 2.5 V P-Channel - 30 0.170 at VGS = - 4.5 V 0.300 at VGS = - 2.5 V ID (A) 3 2 -2 - 1.2 G1 3 mm S2 G2 TSOP-6 Top View 16 25 34 D1 S1 D2 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Ultra Low RDS(on) N- and P-Channel for High Efficiency • Optimized for High-Side/Low-Side • Minimized Conduction Losses • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Portable Devices Including PDAs, Cellular Phones and Pagers D1 S2 G2 G1 2.
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