SI3812DV
..
Vishay Siliconix
N-Channel 20-V (D-S) MOSFET With Schottky Diode
MOSFET PRODUCT SUMMARY
VDS (V)
20 r DS(on) (W)
0.125 @ VGS = 4.5 V 0.200 @ VGS = 2.5 V
ID (A)
"2.4 "1.8
SCHOTTKY PRODUCT SUMMARY
VKA (V)
Vf (V) Diode Forward Voltage
0.48 V @ 0.5 A
IF (A)
TSOP-6 Top View
A 1 6 K G 3 mm S 2 5 N/C
2.85 mm
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage (MOSFET) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) Continuous Drain Current (TJ = 150_C) (MOSFET)a Pulsed Drain Current (MOSFET) Continuous Source Current (MOSFET Diode Conduction)a Average Foward Current (Schottky) Pulsed Foward Current (Schottky) Maximum Power Dissipation (MOSFET)a Maximum Power Dissipation (Schottky)a Operating Junction and Storage Temperature Range Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71069 S-03510- Rev. D, 16-Apr-01 .vishay. TA = 25_C TA = 85_C TA = 25_C TA = 85_C TJ,...
