SI3850DV
Vishay Siliconix plementary MOSFET Half-Bridge (N- and P-Channel)
PRODUCT SUMMARY
VDS (V)
N-Channel 20 r DS(on) (W)
0.500 @ VGS = 4.5 V 0.750 @ VGS = 3.0 V 1.00 @ VGS =
- 4.5 V 1.30 @ VGS =
- 3.0 V
ID (A)
"1.2 "1.0 "0.85 "0.75
P-Channel
- 20
S2
TSOP-6 Top View
G1 D G2 1 6 S1 D D
G2
S2
G1
S1
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C) Pulsed Drain Current Continuous Source Current (Diode Conduction) Maximum Power Dissipation p (S f (Surface M Mounted t d on FR4 Board) B d) Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
N-Channel
20 "12 "1.2 "0.95 "3.5 1 1.25 0.8
P-Channel
- 20 "12 "0.85 "0.65 "2.5
- 1
Unit
W _C
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (Surface Mounted on FR4 Board, " v 10...
